 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Eudyna GaN-HEMT 180W Preliminary FEATURES High Voltage Operation : VDS=50V High Power : 53.0dBm (typ.) @ P3dB High Efficiency: 55%(typ.) @ P3dB Linear Gain : 14.0dB(typ.) @ f=2.6GHz Proven Reliability ES/EGN26A180IV High Voltage - High Power GaN-HEMT DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers with 50V operation, and gives you higher gain. This device target applications are low current and wide band applications for high voltage. ABSOLUTE MAXIMUM RATINGS Item Symbol Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature VDS VGS Pt Tstg Tch Condition Tc=25oC RECOMMENDED OPERATING CONDITION(Case Temperature Tc= 25oC) Item DC Input Voltage Forward Gate Current Reverse Gate Current Channel Temperature r P Symbol VDS IGF IGR Tch im l e Condition RG=2 RG=2 Vp VGDO P3dB d GL Rth a in Rating Limit 50 120 -5 281.25 -65 to +175 250 ry Unit V V W oC oC Unit V mA mA oC ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC) Item Symbol Condition min. Pinch-Off Voltage Gate-Drain Breakdown Voltage 3dB Gain Compression Power Drain Efficiency Linear Gain Thermal Resistance VDS=50V IDS=72mA IGS=- 36mA VDS=50V IDS(DC)=1000mA f=2.6GHz Channel to Case TBD -1.0 TBD Limit Typ. Max. -2.0 -350 53.0 55 14.0 0.65 -3.5 0.8 Unit V V dBm % dB oC/W Edition 1.2 Dec. 2005 1 ES/EGN26A180IV High Voltage - High Power GaN-HEMT Output Power vs. Frequency VDS=50V IDS(DC)=1000mA Output Power and Drain Efficiency vs. Input Power VDS=50V IDS(DC)=1000mA f=2.6GHz 56 54 52 Output Power [dBm] Output Power [dBm] 50 48 46 44 42 40 38 36 2.45 2.50 2.55 2.60 2.65 2.70 2.75 56 54 52 50 48 46 44 42 40 38 36 100 90 80 70 60 Drain Efficiency [%] Frequency [GHz] Pin=26dBm Pin=38dBm Pin=30dBm Pin=42dBm r P Total Power Dissipasion [W] im l e Pin=34dBm a in 25 27 ry 35 37 39 41 43 Input Power [dBm] 50 40 30 20 10 0 29 31 33 Power Derating Curve 300 250 200 150 100 50 0 0 50 100 150 200 250 300 Case Temperature [o C] Edition 1.2 Dec. 2005 2 ES/EGN26A180IV High Voltage - High Power GaN-HEMT S-Parameters @VDS=50V, IDS=1000mA, f=1 to 4 GHz, Zl = Zs = 50 ohm +50j +25j 10 25 50 +100j +10j 0 2.6GHz -10j -25j -50j r P +90 180 10 Scale for |S21| 0.1 Scale for |S 12| -90 im l e -100j 2.6GHz 2.6GHz Freq [GHz] 1.0 1.1 1.2 +250j 1.3 1.4 1.5 1.6 1.7 1.8 1.9 -250j 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 0 3.8 3.9 4.0 ry a in S11 MAG ANG 0.957 165.6 0.956 163.6 0.956 161.5 0.954 159.0 0.951 156.6 0.944 153.0 0.936 148.9 0.918 144.4 0.900 138.3 0.864 130.4 0.801 119.3 0.685 103.0 0.461 76.9 0.127 19.7 0.225 -137.7 0.363 -167.4 0.398 177.4 0.386 167.3 0.343 157.7 0.258 147.1 0.123 137.9 0.069 -85.7 0.282 -91.9 0.470 -108.2 0.606 -123.5 0.694 -136.2 0.747 -146.9 0.783 -156.2 0.800 -165.4 0.810 -174.0 0.810 177.1 S21 MAG ANG 0.367 -14.0 0.357 -19.3 0.359 -24.4 0.378 -30.2 0.415 -35.8 0.469 -42.4 0.556 -50.1 0.685 -59.1 0.895 -69.4 1.223 -81.8 1.764 -98.8 2.704 -121.5 4.175 -153.4 5.757 163.9 6.357 118.3 5.961 78.0 5.343 43.8 4.844 14.6 4.522 -12.6 4.398 -39.2 4.404 -67.6 4.384 -99.0 4.180 -133.5 3.645 -168.8 2.923 157.5 2.205 127.9 1.641 102.7 1.222 82.1 0.942 64.4 0.752 49.5 0.632 35.4 S12 MAG ANG 0.001 -13.4 0.001 -41.8 0.001 -55.6 0.001 -37.1 0.000 -22.2 0.000 -60.3 0.001 -86.6 0.001 -110.0 0.002 -116.6 0.003 -128.9 0.004 -154.1 0.008 -174.2 0.014 156.9 0.021 118.8 0.025 76.0 0.024 38.1 0.022 8.6 0.020 -16.2 0.019 -38.7 0.019 -61.9 0.020 -86.6 0.021 -112.8 0.020 -142.0 0.019 -168.8 0.017 169.6 0.014 150.7 0.013 136.1 0.012 127.1 0.011 119.5 0.011 106.6 0.011 95.0 S22 MAG ANG 0.915 170.5 0.913 169.7 0.912 168.5 0.917 167.0 0.918 165.0 0.920 162.7 0.917 159.8 0.913 156.4 0.905 152.4 0.898 147.4 0.876 140.7 0.833 131.3 0.731 117.6 0.517 100.1 0.228 92.5 0.114 173.0 0.284 -165.8 0.418 -174.2 0.496 173.4 0.533 159.2 0.531 141.2 0.482 117.1 0.407 81.9 0.364 30.5 0.425 -22.0 0.549 -59.7 0.657 -85.1 0.735 -103.4 0.782 -117.1 0.814 -127.5 0.834 -136.2 S12 S21 Edition 1.2 Dec. 2005 3 ES/EGN26A180IV High Voltage - High Power GaN-HEMT IV Package Outline Metal-Ceramic Hermetic Package r P im l e ry a in PIN ASSIGNMENT 1 : GATE 2 : SOURCE(Flange) 3 : DRAIN Unit : mm Edition 1.2 Dec. 2005 4 |
Price & Availability of ESN26A180IV
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |